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H7N1005LD, H7N1005LS, H7N1005LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0391-0200 Rev.2.00 Oct 16, 2006
Features
* Low on-resistance RDS (on) = 85 m typ. * Low drive current * Capable of 4.5 V gate drive
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4 4 1. Gate 2. Drain 3. Source 4. Drain 2 3
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
1 1 2 3
H7N1005LD
H7N1005LS
RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) )
4 G
D
1
2
3
S
H7N1005LM
Rev.2.00 Oct 16, 2006 page 1 of 8
H7N1005LD, H7N1005LS, H7N1005LM
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value 100 20 15 30 30 8 6.4 30 150 -55 to +150 Unit V V A A A A mJ W C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 4. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 100 20 -- -- 1.5 -- -- 6.5 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 85 105 11 830 90 55 15 3 4 15 85 42 6.8 0.93 41 Max -- -- 10 10 2.5 110 155 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 V Note 4 ID = 7.5 A, VGS = 10 V Note 4 ID = 7.5 A, VGS = 4.5 V Note 4 ID = 7.5 A, VGS = 10 V Note 4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 15 A VGS = 10 V, ID = 7.5 A RL = 4 Rg = 4.7 IF = 15 A, VGS = 0 IF = 15 A, VGS = 0 diF/dt = 100 A/s
Rev.2.00 Oct 16, 2006 page 2 of 8
H7N1005LD, H7N1005LS, H7N1005LM
Main Characteristics
Power vs. Temperature Derating
50 100
Maximum Safe Operation Area
Pch (W)
(A)
40
1
10
m
s
10
10
0 s
s
Channel Dissipation
30
ID
Drain Current
1
DC Operation (Tc = 25C)
20
10
PW = 10 ms Operation in (1shot) this area is 0.1 limited by RDS (on) Ta = 25C 0.01 0.1 0.3 1
0
0
50
100
150
200
3
10
30
100 300
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
20 10 V 8V 6V 5V Pulse Test 20
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
16
ID (A) Drain Current
4.5 V
15
12
4V 10
Drain Current
8 3.5 V 4 VGS = 3 V 0 0 2 4 6 8 10
5
Tc = 75C 25C -25C
0 0 1 2 3 4 5 6
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source Saturation Voltage VDS(on) (V)
2.0
Drain to Source On State Resistance RDS(on) (m)
Pulse Test
1000 500
Pulse Test
1.5
200 VGS = 4.5 V 100 10 V 50
1.0
ID = 10 A
0.5
5A 2A
20 10 1 2 5 10 20 50 100
0 0 4 8 12 16 20
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.2.00 Oct 16, 2006 page 3 of 8
H7N1005LD, H7N1005LS, H7N1005LM
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
500 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 VDS = 10 V Pulse Test 10 30 100 25C 75C Tc = -25C Pulse Test
Static Drain to Source on State Resistance RDS(on) (m)
Forward Transfer Admittance vs. Drain Current
400
300 ID = 2 A, 5 A 200 VGS = 4.5 V 100 10 V 0 -25 0 25 50
10 A
2 A, 5 A 75
10 A
100 125 150
Case Temperature
Tc
(C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
10000 3000 1000 300 100 30 10 Coss Crss Ciss VGS = 0 f = 1 MHz
Body to Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
100
50
20 di / dt = 100 A / s VGS = 0, Ta = 25C 10 0.1 0.2 0.5 1 2 5 10 20
Capacitance C (pF)
0
10
20
30
40
50
Reverse Drain Current
IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
(V) VGS (V)
200 ID = 12 A 160 VGS 120 VDS VDD = 25 V 50 V 100 V 12 16 20 1000
Switching Characteristics
VGS = 10 V, VDD = 30 V PW = 5 s, duty 1 % 300 Rg = 4.7 100 30 10 3 1 0.1 tr tf td(off) td(on)
VDS
Drain to Source Voltage
80
8
40
VDD = 100 V 50 V 25 V 0 4 8 12 16 20
4
0
0
Gate to Source Voltage
Switching Time t (ns)
0.3
1
3
10
30
100
Gate Charge
Qg (nc)
Drain Current
ID (A)
Rev.2.00 Oct 16, 2006 page 4 of 8
H7N1005LD, H7N1005LS, H7N1005LM
Reverse Drain Current vs. Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ) (A)
20 10 V 16 8 7 6 5 4 3 2 1 0 25 50 75 100 125 150 IAP = 8 A VDD = 50 V duty < 0.1 % Rg 50
Maximum Avalanche Energy vs. Channel Temperature Derating
Reverse Drain Current
IDR
12
8 VGS = 0, -5 V 5V 0 0 0.4 0.8 1.2 Pulse Test 1.6 2.0
4
Source to Drain Voltage
VSD (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C D=1 1 0.5 0.3
0.2
0.1
0.05
ch - c (t) = s (t) * ch - c
0.0 .01 2
0.1
0
ch - c = 4.17C/W, Tc = 25C PDM PW T
0.03
1s
t ho
pu
lse
D=
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform 1 * L * IAP2 * 2 VDSS VDSS - VDD
V(BR)DSS IAP VDD ID VDS
VDS Monitor
L IAP Monitor
EAR =
Rg
D.U.T
Vin 15 V
50 VDD
0
Rev.2.00 Oct 16, 2006 page 5 of 8
H7N1005LD, H7N1005LS, H7N1005LM
Switching Time Test Circuit Waveform
Vin Monitor D.U.T. Rg RL
Vout Monitor Vin Vout 10% 10%
90%
10%
Vin 10 V
VDS = 30 V td(on)
90% tr
90% td(off) tf
Rev.2.00 Oct 16, 2006 page 6 of 8
H7N1005LD, H7N1005LS, H7N1005LM
Package Dimensions
Package Name LDPAK(L) JEITA Package Code RENESAS Code PRSS0004AE-A Previous Code LDPAK(L) / LDPAK(L)V MASS[Typ.] 1.40g
Unit: mm
(1.4)
4.44 0.2 10.2 0.3 1.3 0.15
11.3 0.5 0.3 10.0 + 0.5 -
8.6 0.3
1.3 0.2 1.37 0.2
0.76 0.1 2.54 0.5 2.54 0.5
11.0 0.5
0.2 0.86 + 0.1 -
2.49 0.2
0.4 0.1
Package Name LDPAK(S)-(1)
JEITA Package Code SC-83
RENESAS Code PRSS0004AE-B
Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.] 1.30g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
10.0
(1.5)
(1.5)
2.49 0.2 0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5
0.3 3.0 + 0.5 -
0.2 0.86 + 0.1 -
0.4 0.1
2.54 0.5
Rev.2.00 Oct 16, 2006 page 7 of 8
1.7
1.3 0.15
7.8 6.6
H7N1005LD, H7N1005LS, H7N1005LM
Package Name LDPAK(S)-(2) JEITA Package Code RENESAS Code PRSS0004AE-C Previous Code LDPAK(S)-(2) / LDPAK(S)-(2)V MASS[Typ.] 1.35g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
2.49 0.2
10.0
(1.5)
(2.3)
0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5 0.4 0.1
0.3 5.0 + 0.5 -
0.2 0.86 + 0.1 -
2.54 0.5
Ordering Information
Part Name H7N1005LD-E H7N1005LSTL-E H7N1005LMTL-E Quantity 500 pcs 1000 pcs 1000 pcs Shipping Container Box (Conductive Sack) Taping Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Oct 16, 2006 page 8 of 8
1.7
1.3 0.15
7.8 6.6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.0

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